Ti Gan Fet
High-speed GaN gate drivers enabling high power density and design simplicity for every power topology
Our drivers’ combination of fast timing specs, leadless packages, and narrow pulse-width response enable you to switch FETs fast. Added features like gate voltage regulation, programmable dead time, and low internal power consumption ensure that high-frequency switching yields the highest efficiency possible.
LMG352xR030-Q1 650-V 30-mΩ GaN FET with Integrated Driver, Protection, and Temperature Reporting datasheet (Rev. A) Author: Texas Instruments, Incorporated SNOSD97,A Subject: Data Sheet Keywords: SNOSD97A Created Date: 4/14/2021 4:03:31 PM. Semiconductors aimed at the automotive and inductrial sectors have been coming at us at a fast and furious pace. High Efficiency and High Power Density 1kW Resonant Converter Reference Design with TI HV GaN FET. PMP20637 — This reference design is a high efficiency, high power density and light weight resonant converter reference design. It converts a 390V input. Nov 09, 2020 By tapping into our automotive expertise, we co-packaged a TI-manufactured GaN-on-silicon FET and fast-switching, 2.2-MHz silicon gate driver to give customers an easy way to bring everything together – integrating switch, controller and protection technologies onto a single chip.
Featured low-side GaN FET drivers
LMG1020
5V, 7A low-side GaN driver with 60MHz, 1ns speed, built for short pulse-width applications.
UCC27611
5V, 4A/6A low side GaN driver. Start creating your short pulse-width applications now.
LMG1025-Q1
Automotive 7-A/5-A single-channel low-side gate driver with 5-V UVLO for narrow-pulse applications.
Featured half-bridge GaN FET drivers
LMG1205
100-V, 1.2-A, 5-A, half-bridge gate driver for enhancement mode GaN FETs helps maximize power density.
LMG1210
200V, 1.5A, 3A half-Bridge GaN driver, built to ensure power density, with adjustable dead time.
LM5113-Q1
Automotive, 100 V 1.2-A / 5-A, half-bridge gate driver, created with power density in mind, for enhancement mode GaN FETs
Nanosecond laser driver reference design for LiDAR
1ns GaN laser drive stage for high resolution LiDAR applications.
Multi-MHz GaN power stage reference design for high-speed DC/DC converters
Flexible GaN power stage for high efficiency designs up to 50MHz.
LMG1205 GaN power stage evaluation module
Ti Gan Fet 2
Small, easy to use, power stage with an external PWM signal. Enables evaluation for many different DC-DC converter topologies.
Featured video
Featured literature
GaN and SiC enable increased energy efficiency in power supplies
Take a high-level look at how wide-band gap materials coupled with TI’s High Voltage portfolio will benefit power supplies.
An Introduction to Automotive LIDAR
Learn about the technology that aims to make cars safer one pulse at a time.
Optimizing multi-megahertz GaN driver design
Learn why your choice of gate driver is critical to realizing GaN’s full potential.
Receive fast and reliable technical support from our engineers throughout every step of your design.
Texas Instruments expanded its high-voltage power management portfolio with the 650-V and 600-V gallium nitride (GaN) field-effect transistors (FETs) for automotive and industrial applications. With a fast-switching, 2.2-MHz integrated gate driver, the new families of GaN FETs help engineers deliver twice the power density, achieve 99% efficiency and reduce the size of power magnetics by 59% compared to existing solutions. TI developed these new FETs using its proprietary GaN materials and processing capabilities on a GaN-on-silicon (Si) substrate, providing a cost and supply-chain advantage over comparable substrate materials such as silicon carbide (SiC).
GaN FETs can help reduce the size of electric vehicle (EV) onboard chargers and DC/DC converters by as much as 50% compared to existing Si or SiC solutions – enabling engineers to achieve extended battery range, increased system reliability and lower design cost. In industrial designs, the new devices enable high efficiency and power density in AC/DC power-delivery applications where low losses and reduced board space are important – such as hyperscale and enterprise computing platforms as well as 5G telecom rectifiers.
Double power density with fewer devices
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TI’s GaN FETs integrate a fast-switching driver, plus internal protection and temperature sensing, enabling engineers to achieve high performance while reducing board space for their power management designs. This integration, plus the high power density of TI’s GaN technology, enables engineers to eliminate more than 10 components typically required for discrete solutions. Additionally, each of the new 30-mΩ FETs can support up to 4 kW of power conversion when applied in a half-bridge configuration.
Reach the industry’s highest efficiency in power factor correction (PFC)
GaN offers the advantage of fast switching, which enables smaller, lighter and more efficient power systems. Historically, the trade-off with gaining fast switching capability is higher power losses. To avoid this trade-off, the new GaN FETs feature TI’s ideal diode mode to reduce power losses. For example, in PFCs, ideal diode mode reduces third-quadrant losses by up to 66% compared to discrete GaN and SiC metal oxide silicon FETs (MOSFETs). Ideal diode mode also eliminates the need for adaptive dead-time control, reducing firmware complexity and development time.
Maximize thermal performance
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Offering 23% lower thermal impedance than the nearest competitive packaging, the TI GaN FET packaging allows engineers to use smaller heat sinks while simplifying thermal designs. The new devices provide maximum thermal design flexibility, no matter the application, with the ability to choose from either a bottom- or top-side-cooled package. In addition, the FETs’ integrated digital temperature reporting enables active power management, allowing engineers to optimize system thermal performance under varying loads and operating conditions.
Ti Gan Fet Da
Pre-production versions of the new LMG3522R030-Q1 and LMG3525R030-Q1 650-V automotive GaN FETs and evaluation modules are expected to be available for purchase on TI.com in the first quarter of 2021 at www.ti.com/autogan.